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| BUZ42 Semiconductor Data Sheet October 1998 File Number 2417.1 4A, 500V, 2.000 Ohm, N-Channel Power MOSFET Features * 4A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 2.000 (BUZ42 field effect transistor designed for applications such as * SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching * Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. 4A, * Linear Transfer Characteristics This type can be operated directly from integrated circuits. 00V, * High Input Impedance .000 Formerly developmental type TA17415. * Majority Carrier Device hm, N* Related Literature hannel Ordering Information - TB334 "Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND ower Components to PC Boards" BUZ42 TO-220AB BUZ42 OSNOTE: When ordering, use the entire part number. ET) Symbol /Author D ) /KeyG ords Harris S emionducor, Nhannel Packaging ower JEDEC TO-220AB OSET, SOURCE ODRAIN GATE 20AB) /Creator DRAIN (FLANGE) ) /DOCIN O pdfark /Pageode /Useutlines /DOCIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 BUZ42 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ42 500 500 4.0 16 20 75 300 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W mJ W/oC oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current, TC = 55oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 1mA (Figure 9) TJ = 25oC, VDS = 500V, VGS = 0V TJ = 125oC, VDS = 500V, VGS = 0V VGS = 20V, VDS = 0V ID = 2.5A, VGS = 10V (Figure 8) VDS = 25V, ID = 2.5A (Figure 11) VCC = 30V, ID 2.5A, VGS = 10V, RGS = 50, RL = 10. (Figures 16, 17) MIN 500 2.1 1.5 VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) TYP 3 20 100 10 1.6 2.5 30 40 110 50 1500 110 40 1.67 75 MAX 4 250 1000 100 2.000 45 60 140 65 2000 170 70 UNITS V V A A nA S ns ns ns ns pF pF pF oC/W oC/W Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC RJA Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulsed Source to Drain Current Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 25H, RG = 25, IPEAK = 4.5A. (See Figures 14 and 15). SYMBOL ISD ISDM VSD trr QRR TC = 25oC TC = 25oC TJ = 25oC, TJ = 25oC, VR = 100V TEST CONDITIONS MIN ISD = 8A, VGS = 0V ISD = 4A, dISD/dt = 100A/s, TYP 1.1 1200 6.0 MAX 4.0 16 1.5 UNITS A A V ns C 2 BUZ42 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0.8 Unless Otherwise Specified 6 5 4 3 2 1 0 VGS 10V 0.6 0.4 0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0 50 100 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, TRANSIENT THERMAL IMPEDANCE 1 0.5 0.2 0.1 PDM 0.1 0.05 0.02 0.01 0 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 0.01 10-5 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 10 TC = 25oC ID, DRAIN CURRENT (A) 101 TJ = MAX RATED ID, DRAIN CURRENT (A) 8 10V 8.0V 7.5V 7.0V PD = 75W VGS = 20V VGS = 6.5V VGS = 6.0V VGS = 5.5V VGS = 5.0V 5s 10s 100s 100 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 6 4 1ms 10ms 100ms DC 103 2 VGS = 4.5V VGS = 4.0V 10-1 100 101 102 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 0 20 40 60 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 3 BUZ42 Typical Performance Curves 7 ID(ON), ON-STATE DRAIN CURRENT (A) 6 5 4 TJ = 25oC 3 2 1 0 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 10 PULSE DURATION = 80s VDS = 25V Unless Otherwise Specified (Continued) 7 6 5 4 3 2 1 PULSE DURATION = 80s 0 0 2 4 6 ID, DRAIN CURRENT (A) 8 6.5V 7V 7.5V 8V 9V 10V 20V 10 VGS = 5V 5.5V 6V FIGURE 6. TRANSFER CHARACTERISTICS VGS = 10V, ID = 2.5A PULSE DURATION = 80s VGS(TH), GATE THRESHOLD VOLTAGE (V) 6 5 4 3 2 1 0 rDS(ON), DRAIN TO SOURCE ON RESISTANCE 5 FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VDS = VGS ID = 1mA 4 3 2 1 -50 0 50 100 150 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (pF) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS 5 VDS = 25V, TJ = 25oC PULSE DURATION = 80s 4 100 3 COSS 10-1 CRSS 2 1 10-2 0 10 20 30 40 0 0 1 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 3 4 ID, DRAIN CURRENT (A) 6 7 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 4 BUZ42 Typical Performance Curves ISD, SOURCE TO DRAIN CURRENT (A) 102 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80s Unless Otherwise Specified (Continued) 15 ID = 6.8A 101 TJ = 150oC 10 VDS = 100V TJ = 25oC 100 VDS = 400V 5 10-1 0 0.5 1.0 1.5 2.0 2.5 0 0 VSD, SOURCE TO DRAIN VOLTAGE (V) 10 20 30 Qg(TOT), TOTAL GATE CHARGE (nC) 40 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 5 |
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